Mobility and saturation velocity in graphene on SiO2
نویسندگان
چکیده
منابع مشابه
Mobility and saturation velocity in graphene on SiO2
We examine mobility and saturation velocity in graphene on SiO2 above room temperature 300– 500 K and at high fields 1 V / m . Data are analyzed with practical models including gated carriers, thermal generation, “puddle” charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2 1012 cm−2. Saturation ve...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3483130